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| IIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII II I II I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII II I II I I I II I IIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIII * High DC Current Gain -- hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc * Monolithic Construction * BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682 * BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 . . . for use as output devices in complementary general-purpose amplifier applications. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. Plastic Medium-Power Silicon NPN Darlingtons SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 7 Operating and Storage Junction Temperating Range Total Device Dissipation @TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Thermal Resistance, Junction to Case Rating Characteristic Symbol TJ, Tstg VCEO VCB VEB PD 5.0 PD, POWER DISSIPATION (WATTS) IC IB 10 40 50 15 20 25 30 35 45 0 15 30 BD675 BD675A Figure 1. Power Temperature Derating 45 45 45 Symbol JC BD677 BD677A 60 TC, CASE TEMPERATURE (C) - 55 to + 150 60 60 75 40 0.32 0.1 4.0 5.0 BD679 BD679A 90 80 80 3.13 Max 105 BD681 120 100 100 135 _C/W Watts W/_C Unit Unit Adc Adc Vdc Vdc Vdc _C 150 165 4.0 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS 40 WATTS BD675 BD675A BD677 BD677A BD679 BD679A BD681* *Motorola Preferred Device CASE 77-08 TO-225AA TYPE Order this document by BD675/D 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BD675 BD675A BD677 BD677A BD679 BD679A BD681 (1) Pulse Test: Pulse Width DYNAMIC CHARACTERISTICS ON CHARACTERISTICS DC Currert Gain(1) (IC = 1.5 Adc,VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base-Emitter On Voltage(1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3 0 Vdc) Collector-Emitter Saturation Voltage(1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100'C) Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) Collector-Emitter Breakdown Voltage(1) (IC = 50 mAdc, IB = 0) 2 0.05 1.0 IC, COLLECTOR CURRENT (AMP) 5.0 1.0 2.0 0.1 0.2 0.5 TC = 25C 2.0 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. DC Safe Operating Area BONDING WIRE LIMIT THERMALLY LIMIT at TC = 25C SECONDARY BREAKDOWN LIMIT v 300 s, Duty Cycle v 2.0%. BD675, 675A BD677, 677A BD679, 679A BD681 Characteristic NPN BD675, 675A BD677, 677A BD679, 679A BD681 Figure 3. Darlington Circuit Schematic BASE 100 BD677, 679, 681 BD675A, 677A, 679A BD675, 677, 679, 681 BD675A, 677A, 679A BD675, 675A BD677, 677A BD679, 679A BD681 BD677, 679, 681 BD675A, 677A, 679A [ 8.0 k [ 120 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. COLLECTOR EMITTER Motorola Bipolar Power Transistor Device Data VCE(sat) VBE(on) Symbol BVCEO ICBO ICEO IEBO hFE hfe Min 45 60 80 100 750 750 1.0 -- -- -- -- -- -- -- -- Max 500 2.5 2.5 2.5 2.8 2.0 0.2 2.0 -- -- -- -- -- -- -- mAdc mAdc Adc Unit Vdc Vdc Vdc -- -- BD675 BD675A BD677 BD677A BD679 BD679A BD681 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 BD675 BD675A BD677 BD677A BD679 BD679A BD681 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *BD675/D* BD675/D |
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